VISHAY 2N7002K N Channel Power MOSFET SOT-23 60V 190mA

The VISHAY 2N7002K Power MOSFET is an N-channel enhancement-mode transistor that delivers reliable performance for a wide range of electronic applications. Featuring a TrenchFET® design, it provides a remarkably low 2Ω ON-resistance and a low 2V threshold voltage, enabling efficient switching and low-voltage operation. With only 25pF input capacitance and rapid 25ns switching speeds, it is ideal for high-speed circuits where responsiveness is critical.

Built to withstand demanding conditions, this MOSFET includes 2000V ESD protection and is halogen-free for environmentally conscious designs. Its low offset voltage and ease of drive without a buffer make it a versatile choice for engineers seeking straightforward integration. The components operates at a drain-source voltage of up to 60V and supports a continuous drain current of 190mA, with a maximum power dissipation of 350mW.

Housed in a compact SOT-23 surface-mount package with three pins, the transistor is suitable for automated assembly and space-constrained printed circuit boards. It is designed for a maximum operating temperature of 150°C, ensuring stable operation in a variety of thermal environments.

Key Features

• TrenchFET® N-channel enhancement-mode design
• Low 2Ω ON-resistance for efficient power handling
• Low 2V threshold voltage for easy low-voltage switching
• Low 25pF input capacitance for minimal loading
• Fast 25ns switching speed for high-speed applications
• 2000V ESD protection for enhanced durability
• Halogen-free construction for environmental compliance
• Low offset voltage and error voltage
• Operates without a buffer, simplifying circuit design

Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 190mA
• On-State Resistance: 2Ω
• Rds(on) Test Voltage