VISHAY IRF730APBF Power MOSFET, N-Channel, 400V, 5.5A, TO-220AB

The VISHAY IRF730APBF is an N-channel enhancement-mode power MOSFET engineered for demanding industrial and power management applications. It features low gate charge, which simplifies drive requirements and enhances switching efficiency. This component is built with improved ruggedness against gate stress, avalanche events, and dynamic dV/dt conditions, ensuring reliable operation in harsh electrical environments.

The MOSFET is fully characterised for both capacitance and avalanche voltage/current, providing designers with predictable performance. An effective COSS (Output Capacitance) is specified, aiding in the optimisation of switching loss calculations for high-frequency circuits. Its robust construction and precise specifications make it a dependable choice for power conversion, motor control, and switching regulator designs.

Housed in a standard TO-220AB package with through-hole mounting, it offers excellent thermal performance and ease of assembly on printed circuit boards. The device is capable of dissipating up to 74W of power, supported by a maximum continuous operating temperature of 150°C. With a drain-source voltage rating of 400V and a continuous drain current of 5.5A, this MOSFET is well-suited for medium-power applications requiring durability and efficiency.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 400 V
• Continuous Drain Current (Id): 5.5 A
• Drain-Source On-State Resistance (Rds(on)): 1 Ω @ 10V
• Gate-Source Threshold Voltage (Max): 4.5 V
• Power Dissipation: 74 W
• Package / Case: TO-220AB
• Mounting Type: Through Hole
• Number of Pins: 3
• Operating Temperature Max: 150°C

Combining Vishay's quality with a robust feature set, the IRF730APBF provides a solid foundation for building efficient and reliable power electronic systems.