VISHAY IRF830APBF Power MOSFET N Channel 500V 5A TO-220AB

The VISHAY IRF830APBF is a high-performance N-channel Power MOSFET designed for modern power management applications. With a drain-source voltage rating of 500V and a continuous drain current of 5A, this transistor delivers reliable performance in demanding environments. Its low gate charge (Qg) simplifies drive requirements, making it an ideal choice for high-frequency switching applications.

This MOSFET features a drain-source on-state resistance of just 1.4 ohms, ensuring efficient operation with minimal power loss. The TO-220AB package and through-hole mounting provide robust thermal performance and easy integration into standard PCB designs. The device can operate at temperatures up to 150°C, making it suitable for high-temperature industrial environments.

Key features include a dynamic dV/dt rating for enhanced ruggedness, repetitive avalanche rating for increased reliability, and the ability to parallel multiple devices for higher current handling. The simple drive requirement reduces design complexity, while the easy parallel capability allows for scalable power solutions.

Applications

• Power Management
• Uninterruptible Power Supplies (UPS)
• High-Speed Power Switching
• SMPS (Switch Mode Power Supplies)

Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 500V
• Continuous Drain Current (Id): 5A
• Drain Source On State Resistance (Rds(on)): 1.4ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4.5V
• Power Dissipation: 74W
• Transistor Case Style: TO-220AB
• Transistor Mounting: Through Hole
• No. of Pins: 3
• Operating Temperature Max: 150°C
• Weight: 2 grams
• Height: 43mm
• Width: 33mm
• Depth: 15mm