VISHAY IRFBC40APBF Power MOSFET N-Channel, 600V 6.2A, TO-220AB

The VISHAY IRFBC40APBF is a robust 600V N-channel enhancement-mode Power MOSFET, engineered for high-performance power switching. This single configuration component is a cornerstone for demanding applications, offering a continuous drain current of 6.2A and a low on-state resistance of 1.2 ohm, which translates into excellent efficiency and reduced power losses during operation.

A key advantage of this MOSFET is its low gate charge (Qg), which simplifies drive circuit requirements and facilitates faster switching speeds. The device is built for ruggedness, featuring improved tolerance to gate stress, avalanche conditions, and dynamic dV/dt events, ensuring enhanced reliability in harsh electrical environments. Its fully characterised capacitance and avalanche ratings provide designers with the precise data needed for robust system planning.

Housed in the industry-standard TO-220AB package with through-hole mounting, it ensures straightforward installation and excellent thermal management, supported by a high power dissipation rating of 125W. This makes it an ideal choice for a wide range of industrial power management tasks where durability and performance are critical.

Primary Specifications

• Drain-Source Voltage (Vds): 600V
• Continuous Drain Current (Id): 6.2A
• Drain-Source On-State Resistance (Rds(on)): 1.2 ohm (tested at 10V)
• Gate-Source Threshold Voltage: Maximum 4V
• Package / Mounting: TO-220AB / Through Hole
• Power Dissipation: 125W
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C

With its combination of high voltage handling, efficient switching, and proven ruggedness, the IRFBC40APBF is a reliable and effective solution for advanced power electronics designs.