Vishay IRFI830GPBF N-Channel MOSFET, 500V, 3.1A, TO-220FP

The IRFI830GPBF is a third-generation N-channel enhancement-mode Power MOSFET from Vishay. It is engineered to deliver an optimal combination of fast switching, a ruggedised device design, and low ON-resistance, making it a reliable choice for demanding power applications.

The FULLPAK isolated package eliminates the need for additional insulating hardware, simplifying installation and reducing component count. The moulding compound provides high isolation capability and low thermal resistance between the tab and external heat sink, offering performance equivalent to a 100-micron mica barrier with standard products. Mounting is straightforward using a single clip or a single screw fixing.

Key Benefits & Features

• Isolated package rated at 2.5kVRMS (t = 60s, f = 60Hz) for enhanced safety
• High voltage isolation with a 4.8mm sink-to-lead creepage distance
• Dynamic dV/dt rating ensures robust performance under transient conditions
• Low thermal resistance facilitates efficient heat dissipation
• Suitable for industrial, power management, and commercial applications

Specifications

• Channel Type: N-Channel
• Drain Source Voltage (Vds): 500V
• Continuous Drain Current (Id): 3.1A
• Drain Source On-State Resistance: 1.5 ohm
• Transistor Case Style: TO-220FP
• Transistor Mounting: Through Hole
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 32W
• No. of Pins: 3
• Operating Temperature Max: 150°C

This MOSFET is ideal for engineers seeking a high-voltage, isolated package solution that combines performance and ease of integration.