
VISHAY N Channel Power MOSFET, 1kV, 6A, 2 Ohm, TO-247AC. Ideal for industrial and power management applications.
This VISHAY N Channel Power MOSFET is a 1000V enhancement-mode device featuring a single configuration. As a third-generation Power MOSFET, it provides a reliable combination of fast switching, ruggedised device design, and low ON-resistance. It also features a greater creepage distance between pins, ensuring it meets the requirements of most safety specifications, making it well-suited for high-voltage environments where safety and reliability are critical.
Key Features
Designed for robust performance, this through-hole mount transistor is ideal for demanding applications. The TO-247AC case style and isolated central mounting hole facilitate straightforward and secure installation onto printed circuit boards. With a continuous drain current of 6A, a maximum power dissipation of 180W, and a drain source on-state resistance of 2 ohm, it delivers efficient power management and control for industrial systems.
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