Vishay N Channel Power MOSFET, 40V, 4.3A, SOT-23 SMD

The Vishay N Channel Power MOSFET is a surface-mount device housed in a compact SOT-23 case, designed for efficient power management and switching applications. As a TrenchFET® Power MOSFET, it is 100% Rg tested, ensuring high reliability and consistent performance in demanding circuit designs.

With a drain-source voltage of 40V and a continuous drain current of 4.3A, this transistor offers robust power handling. The device features a low drain-source on-state resistance and operates with a gate-source threshold voltage of up to 1.5V. It supports a power dissipation of 1.7W and can withstand operating temperatures up to 150°C, making it suitable for high-stress environments.

This SMD MOSFET is specifically engineered for use in a variety of power management scenarios. It is an excellent choice for DC/DC converters and load switches, as well as for LED backlighting applications where efficiency and thermal performance are critical.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 40V
• Continuous Drain Current (Id): 4.3A
• Drain Source On State Resistance: 0.051 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 1.5V
• Power Dissipation: 1.7W
• Number of Pins: 3
• Operating Temperature Max: 150°C
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Weight: 0.127 grams
• Dimensions: 43 mm x 33 mm x 15 mm