VISHAY P-Channel Power MOSFET, 200V 3.5A TO-220AB

The VISHAY P-Channel Power MOSFET is a robust and reliable semiconductor component designed for efficient switching and power management in a wide array of electronic circuits. Engineered with a 200V drain-source voltage (Vds) rating and a 3.5A continuous drain current (Id), this device is capable of handling moderate to high-power applications with stability and precision. Its defining characteristic is a low drain-source on-state resistance (Rds(on)) of just 1.5ohm (tested at 10V), which minimises power loss and heat generation during operation, leading to improved overall system efficiency.

Housed in the industry-standard TO-220AB through-hole package, this MOSFET offers excellent thermal performance and ease of mounting on printed circuit boards (PCBs). The package facilitates efficient heat dissipation, supported by a maximum power dissipation rating of 40W. With a gate-source threshold voltage maximum of 2V, it is well-suited for low-voltage drive circuits, making it compatible with many logic-level controllers and microprocessors.

Key Specifications & Features

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 3.5A
• On-State Resistance (Rds(on)): 1.5ohm @ 10V
• Package / Case: TO-220AB (Through-Hole)
• Power Dissipation: 40W
• Gate Threshold Voltage: 2V Max
• Pin Count: 3 Pins
• Operating Temperature: Up to 150°C
• Dimensions: 33mm (Width) x 43mm (Height) x 15mm (Depth)

This component is a fundamental building block for designers and engineers, providing a dependable solution for power conversion, motor control, load switching, and amplification tasks in industrial, automotive, and consumer electronics.