Vishay P-Channel Power MOSFET, 60V 2.8A, SOT-23 SMD

The Vishay SQ series P-Channel Power MOSFET is a high-reliability, automotive-grade semiconductor designed for demanding applications. Manufactured on a dedicated, robust process flow, this AEC-Q101 qualified TrenchFET® technology component is engineered to offer exceptional ruggedness and performance in a compact surface-mount package.

Featuring a low drain-source on-state resistance (Rds(on)) of 0.177 ohm at 10V, it ensures efficient power switching with minimal loss. It is rated for a continuous drain current of 2.8A and a drain-source voltage of 60V, making it suitable for a variety of power management and control circuits. The device is built to withstand a maximum junction temperature of 175 °C, ensuring stable operation under high thermal stress.

Housed in a space-saving SOT-23 package, this MOSFET is part of Vishay's PowerPAK® family, which delivers thermal and electrical performance comparable to larger packages while saving valuable board space. It is supplied in a lead (Pb)- and halogen-free construction, aligning with modern environmental and safety standards.

Key Specifications & Features:

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 2.8 A
• Drain-Source On-State Resistance (Rds(on)): 0.177 ohm (@ Vgs=10V)
• Gate-Source Threshold Voltage (Vgs(th) Max): 2.5 V
• Maximum Power Dissipation: 2 W
• Package / Case Style: SOT-23
• Mounting Type: Surface Mount Device (SMD)
• Pin Count: 3 Pins
• Maximum Operating Temperature: +175 °C
• Technology: TrenchFET®
• Qualification: AEC-Q101 Automotive
• Construction: Lead- and Halogen-Free

Ideal for designers seeking a compact, reliable, and high-performance switching solution for automotive and industrial electronics.