VISHAY Power MOSFET, N-Channel, 100V 5.6A, TO-220AB

The VISHAY Power MOSFET represents the third generation of power transistor technology, delivering an optimal balance of fast switching performance, robust device construction, low on-resistance, and cost-effectiveness. Engineered for demanding applications, it ensures reliable operation and efficient power management.

This N-channel MOSFET is characterised by a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 5.6A, making it suitable for a wide array of power switching tasks. A key advantage is its low drain-source on-state resistance (Rds(on)) of just 0.54 ohms, measured at a gate-source voltage of 5V, which minimises power loss and heat generation during operation.

Key Features & Benefits

• Fast Switching & High Temperature Operation: Designed for rapid switching speeds and capable of operating at temperatures up to 175°C.
• Robust Design: Features a repetitive avalanche rating and a high dynamic dV/dt rating, enhancing durability in stressful electrical environments.
• Logic-Level Gate Drive: Simplifies interface with modern microcontroller and logic circuits, allowing for easier integration into digital systems.
• Ease of Paralleling: The device's characteristics make it well-suited for use in parallel configurations to handle higher current loads.
• TO-220AB Package: Housed in the industry-standard TO-220AB through-hole package, providing excellent thermal performance and ease of mounting to a heatsink for effective heat dissipation.

With a power dissipation rating of 43W, this MOSFET is built to handle significant power levels. Its robust construction and advanced features make it an excellent choice for designers seeking a reliable and efficient component for power conversion, motor control, and switching regulator applications.