VISHAY Power MOSFET, P Channel, 100V, 13.2A, PowerPAK 1212, SMD

The VISHAY P-Channel Power MOSFET is a high-performance semiconductor device designed for demanding power management applications. Featuring TrenchFET® technology, it delivers efficient switching with a low drain-source on-state resistance (Rds(on)) of just 0.134 ohm at 4.5V, minimising power loss and heat generation. This 100V, 13.2A MOSFET is housed in a compact PowerPAK® 1212 surface-mount package, offering a low profile of 1.07mm ideal for space-constrained designs.

Key Features & Benefits

• Advanced Technology: Built with TrenchFET® power MOSFET technology for superior electrical performance and reliability.
• Low Thermal Resistance: The PowerPAK® 1212 package is engineered for excellent thermal management, allowing for effective heat dissipation and supporting a high power dissipation of 52W.
• Rigorous Testing: Device is UIS (Unclamped Inductive Switching) and gate resistance (Rg) tested, ensuring robustness and stability in real-world switching scenarios.
• Space-Efficient Design: The surface-mount package with its slim profile facilitates high-density PCB layouts commonly required in modern power supplies and converters.

Primary Applications

This component is particularly well-suited for use as an active clamp in intermediate DC/DC power supplies, where its fast switching and efficiency are critical. Its robust electrical characteristics also make it an excellent choice for a variety of other power switching, load switching, and motor control circuits in industrial, automotive, and telecommunications equipment.

Technical Specifications at a Glance

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 100 V
• Continuous Drain Current (Id): 13.2 A
• Drain-Source On-State Resistance (Rds(on)): 0.134 ohm @ 4.5V
• Gate-Source Threshold Voltage (Max): 1 V
• Maximum Power Dissipation: 52 W
• Pin