VISHAY Si2301CDS-T1-E3 P-Channel MOSFET, 20V, 3.1A, SOT-23

The VISHAY Si2301CDS-T1-E3 is a high-performance P-channel TrenchFET® Power MOSFET, designed for efficient power management in compact electronic designs. Its advanced technology provides excellent on-state resistance and switching characteristics, making it an ideal choice for demanding load-switching applications where space and power efficiency are critical.

With a drain-source breakdown voltage of -20V minimum and a continuous drain current rating of -3.1A, this MOSFET is engineered to handle significant power loads reliably. It features a low gate-source threshold voltage, which allows for effective control with lower drive voltages, enhancing energy efficiency in the overall system.

Key Specifications & Performance

• On-State Resistance: A remarkably low drain-source on-state resistance (Rds(on)) of 0.112 ohms at a test voltage of 2.5V, which minimises conduction losses and heat generation.
• Current Handling: Capable of a pulsed drain current of -10A, providing robust performance under transient load conditions.
• Thermal Management: Offers a maximum power dissipation of 1.6W and features a VDS temperature coefficient of -18mV/°C typical, aiding in stable operation across a wide temperature range.
• Package & Reliability: Housed in a compact, industry-standard SOT-23 surface-mount package, it is built to operate reliably within an extensive junction temperature range from -55°C to 150°C.

This component is characterised by its forward transconductance of 9.5S typical and includes integral source-drain diode functionality, with a continuous diode current rating of -1.3A. Its design is focused on delivering reliable, repeatable performance for modern, miniaturised electronics.

Applications

Primarily designed as a load switch, this P-channel MOSFET is perfectly suited for power management tasks in portable devices, battery-powered equipment, DC