VISHAY SI2312CDS-T1-GE3 N-Channel Power MOSFET, SOT-23, 20V 6A

The VISHAY SI2312CDS-T1-GE3 is a high-performance N-channel TrenchFET® Power MOSFET designed for efficient power management in portable and compact electronic applications. With a drain-source voltage of 20V and a continuous drain current of 6A, this MOSFET delivers reliable switching performance in a space-saving SOT-23 package.

This surface-mount device features an ultra-low on-state resistance of just 0.0318 ohm, minimising conduction losses and improving overall system efficiency. It is ideal for DC-to-DC converters and load switching in battery-powered devices, where power efficiency and thermal performance are critical.

The MOSFET utilises advanced LITTLE FOOT® technology, integrating power handling capabilities into small-signal packages, ensuring excellent heat transfer for its size. It is halogen-free according to IEC 61249-2-21 definition, meeting modern environmental standards.

Key Features

• N-channel TrenchFET® technology for high efficiency
• Drain-source voltage (Vds): 20V
• Continuous drain current (Id): 6A
• Low on-state resistance: 0.0318 ohm at 4.5V gate drive
• Surface-mount SOT-23 package for compact designs
• Halogen-free according to IEC 61249-2-21
• 100% Rg tested for quality assurance
• Operating temperature up to 150°C

Applications

This power MOSFET is suitable for a wide range of power management tasks, including DC-to-DC converters and load switching in portable devices, making it a versatile component for modern electronics.