VISHAY SUM110P04-05-E3 P-Channel Power MOSFET, 40V, 110A, D2PAK

The VISHAY SUM110P04-05-E3 is a high-performance P‑Channel TrenchFET® power MOSFET designed for efficient power management in a wide range of electronic applications. This transistor delivers robust switching performance with a drain‑source voltage (Vds) rating of 40V and a continuous drain current (Id) of 110A, making it suitable for demanding power conversion and load switching tasks.

With a very low drain‑source on‑state resistance of just 5000 µohm (at Vgs=10V), the device minimises conduction losses and improves overall system efficiency. The surface‑mount TO‑263 (D2PAK) package facilitates automated assembly and offers excellent thermal performance, thanks to its large tab. This MOSFET can dissipate up to 375W of power, ensuring reliable operation under heavy loads.

Key features include a gate‑source threshold voltage of 3V (maximum), an operating temperature range up to 175°C, and a compact 3‑pin design. The component is supplied in a D2PAK package, ideal for space‑constrained PCB layouts.

Specifications

• Channel Type: P‑Channel
• Drain‑Source Voltage (Vds): 40V
• Continuous Drain Current (Id): 110A
• On‑State Resistance (Rds(on)): 5000 µohm (max, at Vgs=10V)
• Transistor Case Style: TO‑263 (D2PAK)
• Mounting Type: Surface Mount
• Gate‑Source Threshold Voltage (Max): 3V
• Power Dissipation: 375W
• Number of Pins: 3
• Operating Temperature (Max): 175°C

The VISHAY SUM110P04-05-E3 is a dependable choice for engineers who require a robust, low‑resistance P‑channel MOSFET for power management circuits, motor control, and battery protection.