VISHAY TrenchFET P-Channel MOSFET 60V 120A, TO-263
High-performance VISHAY TrenchFET P-Channel MOSFET, 60V, 120A, low 0.0056Ω Rds(on) in TO-263 package. AEC-Q101 qualified.
The VISHAY TrenchFET® P-Channel Power MOSFET delivers high-efficiency switching in a compact surface-mount package. Engineered for demanding power applications, this device features a continuous drain current of up to 120A and a low on-state resistance of just 0.0056Ω, minimising conduction losses and improving thermal performance.
Housed in a TO-263 (D2PAK) package with low thermal resistance, the MOSFET ensures effective heat dissipation, enabling reliable operation up to a maximum junction temperature of 175°C. The device is 100% Rg and UIS tested, guaranteeing robust avalanche ruggedness and consistent gate charge performance for reliable operation in harsh environments.
Key Benefits
- High Current Capability: Supports up to 120A continuous drain current for heavy-load switching.
- Low On-Resistance: 0.0056Ω (typical) ensures minimal power loss and improved efficiency.
- Automotive Qualified: AEC-Q101 qualified for demanding automotive and industrial applications.
- Surface Mount Design: Ideal for automated assembly, saving board space and reducing manufacturing costs.
With a gate-source threshold voltage of 2V and a power dissipation rating of 375W, this MOSFET is well-suited for high-power circuits such as DC-DC converters, motor controllers, and power supplies. The 3-pin TO-263 package provides excellent thermal and electrical performance, making it a reliable choice for your power management needs.
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- Delivery to United States: 3-5 business days*
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