Gate Driver IC Isolated High Side Low Side DSO-18 2ED020I12FIXUMA1

The 2ED020I12FIXUMA1 is a high-voltage, high-speed power MOSFET and IGBT driver with interlocking high-side and low-side referenced outputs. Designed to drive N-channel power MOSFETs or IGBTs operating up to 1.2kV, it is ideal for demanding power conversion applications.

This isolated gate driver features a floating high-side supply that can be powered directly or via a bootstrap diode and capacitor. It includes a dedicated shutdown input with pull-up, and all logic inputs are compatible with 3.3V and 5V TTL. The output stage incorporates a high pulse current buffer for minimal cross-conduction, while matched propagation delays simplify high-frequency operation.

Key Features:

• On-chip 1Ω bootstrap diode
• CMOS Schmitt-triggered inputs with pull-down, non-inverting
• Interlocking inputs, dedicated shutdown input with pull-up
• Power supply operating range 14V to 18V
• High dV/dt immunity and matched propagation delay
• General-purpose operational amplifier (20MHz typ gain-bandwidth product)
• Low power consumption, 2.4mA typ high-side quiescent current
• 85ns typ turn-on propagation delay
• Storage temperature range -55°C to 150°C

The device is supplied in a DSO-18 package, with surface-mount (SOIC) mounting. Suitable for controlling IGBTs, MOSFETs, and SiC MOSFETs in high-frequency power applications, it provides robust, efficient gate drive.