ONSEMI PNP Bipolar RF Transistor, 20V, 600MHz, SOT-23

The ONSEMI PNP Bipolar RF Transistor is precisely designed for general radio frequency amplifier and mixer applications. Operating effectively at transition frequencies up to 600MHz, this transistor supports collector currents in the 1 to 30mA range, making it highly suitable for a variety of low-power RF circuit designs and communication systems.

Featuring a compact SOT-23 surface mount package with 3 pins, this component allows for efficient use of printed circuit board space. It offers a maximum collector-emitter voltage of 20V and a collector-base voltage of 20V, with an emitter-base voltage of 3V. The device provides a continuous collector current of -50mA and a power dissipation of 225mW, ensuring reliable performance in demanding electronic environments.

With a DC current gain (hFE) of 60 and a maximum operating temperature of 150°C, this PNP RF transistor delivers consistent and stable operation. The product dimensions are 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of 110 grams for the packaged unit.