STMicroelectronics BD911 NPN Power Transistor, TO-220, 15A

The STMicroelectronics BD911 is a robust NPN bipolar power transistor designed for through-hole mounting in a TO-220 package. Manufactured using advanced epitaxial planar technology, it delivers reliable performance in demanding electronic circuits, characterised by high current and power handling capabilities. This transistor is engineered for stability and efficiency, making it a key component in power regulation and amplification stages.

It features a substantial collector current (Ic) rating of 15A and a high power dissipation (Pd) of 90W, enabling it to manage significant loads. With a collector to emitter voltage (Vce) maximum of 100V, it is suitable for medium-to-high voltage applications. The device maintains a low collector to emitter saturation voltage of just 3V at a 10A collector current, which helps to minimise power loss and heat generation during operation.

Key Electrical Characteristics

• Collector to Emitter Voltage (Vce max): 100V
• Continuous Collector Current (Ic): 15A
• Power Dissipation (Pd): 90W
• Collector-Emitter Saturation Voltage (Vce sat): 3V @ 10A
• DC Current Gain (hFE min): 50
• Transition Frequency: 3MHz
• Operating Junction Temperature: Up to 150°C

The TO-220AB case style offers excellent thermal performance for heat sinking, which is essential given its high power rating. Its three-pin through-hole mounting provides a secure and durable physical connection for PCB applications, ensuring long-term reliability in assembled products. This transistor is a versatile and dependable choice for engineers and hobbyists designing robust electronic systems.