STMICROELECTRONICS N-Channel Power MOSFET, 60V 24A, TO-252 (DPAK)

The STMICROELECTRONICS STD20NF06LT4 is a high-performance N-channel Power MOSFET engineered using STMicroelectronics' advanced STripFET™ II technology and unique Single Feature Size™ strip-based process. This design achieves an extremely high packing density, which directly translates into a very low ON-resistance, ensuring efficient power handling with minimal losses.

The device is built for reliability, featuring rugged avalanche characteristics and a simplified manufacturing process that enhances reproducibility. It boasts an exceptional dV/dt capability and is 100% avalanche tested, providing confidence in demanding applications. Characterisation is application-oriented, supporting an operating junction temperature range from -55°C to 175°C.

Key Features & Applications

• Low ON-Resistance: A drain-source on-state resistance (Rds(on)) of just 0.04 ohms at 10V gate-source voltage ensures high efficiency and reduced heat generation.
• Robust Performance: Designed with exceptional dV/dt capability and 100% avalanche testing for superior ruggedness and reliability in stressful conditions.
• Wide Temperature Range: Operates reliably across a broad junction temperature range from -55°C to 175°C, suitable for industrial environments.
• Surface Mount Design: Housed in a TO-252 (DPAK) package for compact, surface-mount assembly on printed circuit boards (PCBs).

This MOSFET is ideally suited for various power management and industrial applications where efficient switching, robustness, and thermal performance are critical. Its combination of high current handling, low resistance, and proven reliability makes it a trusted component for designers.