STMicroelectronics NPN Darlington Transistor TO-220

The STMicroelectronics NPN Darlington Transistor is a complementary silicon epitaxial-base power transistor featuring a monolithic Darlington configuration. Housed in a standard JEDEC TO-220 plastic package, this component is specifically designed for use in medium power linear and switching applications, providing reliable performance and efficient power management.

A standout feature of this device is the integrated anti-parallel collector-emitter diode, which enhances its protective capabilities in switching circuits. This transistor offers a robust DC current gain of 500hFE and can handle a collector-emitter voltage of up to 100V, making it highly suitable for demanding industrial environments. A PNP complementary type is also available for complementary circuit push-pull designs.

With a maximum power dissipation of 50W and a continuous DC collector current of 2A, this component delivers consistent power handling. It is designed for through-hole mounting, ensuring a secure and stable connection on the printed circuit board. The transistor operates reliably at temperatures up to 150°C, while its compact dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, alongside a lightweight profile of just 2 grams, make it ideal for space-constrained assemblies.

Key Specifications

• Transistor Polarity: NPN
• Configuration: Monolithic Darlington
• Collector Emitter Voltage (V(br)ceo): 100V
• Power Dissipation (Pd): 50W
• DC Collector Current: 2A
• DC Current Gain (hFE): 500
• Case Style: TO-220
• Number of Pins: 3
• Mounting Type: Through Hole
• Maximum Operating Temperature: 150°C