VISHAY P-Channel Power MOSFET TO-263 (D2PAK) - 100 90

The VISHAY P-Channel Power MOSFET is a high-performance electronic component designed for demanding power management applications. It utilises a P-channel TrenchFET® technology, offering enhanced efficiency and reliability in switching and control circuits. This surface-mount device is engineered to handle significant current and voltage levels, making it an excellent choice for modern power conversion systems.

With its robust TO-263 (D2PAK) package, this MOSFET provides a reliable thermal and electrical interface, ensuring stable operation under high-power conditions. The component is specified for a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 90A, enabling it to manage substantial power loads. The low drain-source on-state resistance (Rds(on)) of 0.019ohm minimises conduction losses, leading to improved overall system efficiency and reduced heat generation.

This MOSFET is suitable for a wide array of power management tasks, including but not limited to DC-DC converters, motor drives, power supplies, and load switching applications. Its high power dissipation rating of 375W and a maximum operating temperature of 175°C allow it to perform reliably in challenging environments. The device features a standard 3-pin configuration and is designed for automated surface-mount assembly, facilitating high-volume production.

Engineers and designers will appreciate the combination of high current capability, low on-resistance, and the durability of the TO-263 package. This makes the VISHAY MOSFET a dependable component for enhancing the performance and efficiency of power electronic designs across industrial, automotive, and consumer electronics sectors.

Variant Details

• Size: 100 90