DIODES INC. DMP2035U P-Channel MOSFET, 20V, 3.6A, SOT-23
P-channel MOSFET, 20V, 3.6A, SOT-23. Low on-resistance, fast switching, ESD protected. Ideal for power management.
The DIODES INC. DMP2035U is a P-channel enhancement mode MOSFET in a compact SOT-23 package. Engineered for efficient power management, this transistor delivers low input capacitance and low on-resistance, ensuring minimal power loss and improved efficiency in your circuits.
This MOSFET offers fast switching speeds and low input/output leakage, making it ideal for high-frequency applications. It is ESD protected, enhancing its robustness in handling and operation. The device can handle a continuous drain current of -4.9A at 25°C, with a pulsed drain current capacity of -24A, providing excellent current handling for its size.
With a drain-source voltage rating of -20V and a gate-source voltage range of ±10V, it offers a solid performance envelope. The static drain-source on-resistance is a low 35 milliohms maximum, contributing to reduced conduction losses. The operating and storage temperature range extends from -55°C to +150°C, accommodating demanding environments.
This surface-mount MOSFET is suited for load switching, power management in portable devices, and DC-DC conversion. Its SOT-23 package is ideal for space-constrained designs. The DMP2035U combines performance and reliability, making it a dependable choice for your electronic projects.
Key Specifications
- Channel Type: P-Channel
- Maximum Drain-Source Voltage: -20V
- Maximum Continuous Drain Current: -4.9A (at 25°C)
- Drain-Source On-Resistance: 35mΩ max (at VGS = -4.5V)
- Gate-Source Threshold Voltage: Max 700mV
- Power Dissipation: 810mW
- Package: SOT-23 (3 pins)
- Operating Temperature Range: -55°C to +150°C
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