DIODES INC. Dual MOSFET, N & P Channel, 30V, 3.8A, TSOT-26

The DIODES INC. Dual MOSFET has been expertly designed to minimise on-state resistance while maintaining superior switching performance. This makes it an ideal choice for high-efficiency power management applications where reliability and speed are critical.

Featuring complementary N and P channel configurations, this surface-mount device delivers balanced and efficient performance. The low on-resistance ensures minimal power loss during operation, while the low input capacitance and fast switching speed allow for rapid state changes, improving overall circuit efficiency.

With a drain-source voltage of 30V for both channels and a continuous drain current of 3.8A, this MOSFET provides robust capability in a compact package. It is housed in a TSOT-26 case style with 6 pins, making it highly suitable for space-constrained, surface-mount PCB designs.

Key Features

• Complementary N and P Channel configuration
• Low On-Resistance (0.034 Ohm)
• Low Input Capacitance
• Fast Switching Speed
• Surface-mount TSOT-26 package

Whether you are designing advanced power management systems or compact portable devices, this dual MOSFET offers a dependable and highly efficient solution for your switching and amplification needs.