FZT758 PNP High Voltage Bipolar Transistor, SOT223 Package

The FZT758 is a robust PNP (Positive-Negative-Positive) high voltage Bipolar Junction Transistor (BJT) designed for demanding power management applications. It delivers a high continuous collector current of -500mA and a substantial collector-base voltage rating of -400V, making it a reliable choice for switching and amplification in high-voltage circuits.

This transistor features a low saturation voltage (VCE(SAT) of less than 250mV at 50mA), which minimises power loss and improves overall efficiency during operation. It offers excellent current gain, with an hFE greater than 40, specified up to 200mA, ensuring stable performance and reliable signal hold-up in high-current scenarios. For complementary circuit designs, the FZT658 serves as the matching NPN type.

Constructed as a halogen-free and green device, it adheres to modern environmental standards. The component is housed in a compact, surface-mount SOT-223 package with 4 pins, facilitating efficient use of board space in modern electronics. It boasts a wide operating temperature range from -55°C to 150°C, ensuring reliable functionality in extreme environments.

Key Features & Specifications

• High Voltage & Current: Rated for -400V collector-base voltage and -500mA continuous collector current.
• Low Saturation Voltage: VCE(SAT) is less than 250mV at 50mA for efficient switching.
• High Current Gain: hFE is greater than 40, specified up to 200mA.
• Robust Construction: Halogen-free, with a UL94V-0 flammability rating for enhanced safety.
• Wide Temperature Range: Operates reliably from -55°C to 150°C.
• Surface Mount Design: SOT-223 case style for streamlined PCB assembly.
• High Pulse Handling: Capable of withstanding 1A peak pulse currents.

This high-performance transistor is an essential component for engineers designing reliable and efficient power systems.