Diodes Inc. N Channel Power MOSFET, 100V, 170mA, 6 Ohm, SOT-23

The Diodes Inc. N Channel Power MOSFET is an enhancement mode field effect transistor produced using proprietary, high density, and advanced trench technology. This component has been engineered to minimise on-state resistance while delivering rugged, reliable, and fast switching performance.

This MOSFET is particularly suited for low-voltage and low-current applications. It is an ideal choice for small servo motor controls, power MOSFET gate drivers, and general switching applications. The device features a low gate threshold voltage and low input capacitance, which contribute to its fast switching speed. Additionally, it offers low input and output leakage alongside a high drain-source voltage rating.

Key Specifications

• Drain-Source Voltage (Vds): 100 V
• Continuous Drain Current (Id): 170 mA
• Drain-Source On-State Resistance: 6 ohm
• Power Dissipation: 300 mW
• Package Type: SOT-23
• Mounting Style: Surface Mount

Designed for efficiency and durability, this MOSFET operates reliably across a wide temperature range from -55°C to +150°C, making it a versatile component for various electronic circuits.