
Diodes Inc. 60V N-Channel Power MOSFET in SOT-23 package. AEC-Q101 qualified, low on-resistance. Ideal for power management & defence.
The DIODES INC. N-Channel Power MOSFET is an enhancement mode field effect transistor designed to deliver high-efficiency power management. Engineered to minimise on-state resistance (RDS(on)) while maintaining reliable switching performance, this component is suitable for demanding applications.
Featuring matte tin-plated terminals, the device offers excellent solderability, meeting the stringent requirements of MIL-STD-202, method 208. Housed in a moulded plastic case utilising a 'Green' UL94V-0 rated compound, this MOSFET is both halogen and antimony-free, aligning with modern environmental standards.
With its low gate threshold voltage, low input capacitance, and fast switching speed, this transistor ensures efficient operation across various circuit designs. It also features low input and output leakage. Qualified to AEC-Q101 standards, it provides proven reliability for critical systems.
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