DIODES INC. PNP Medium Power Transistor, E-Line

This PNP Silicon Planar Medium Power Bipolar Transistor from Diodes Inc. is designed for reliable performance in a variety of demanding electronic circuits. It offers a continuous collector current of 1A and a collector-base voltage of 120V, making it suitable for medium power applications where consistent current handling is essential.

Featuring an E-Line case style and through-hole mounting, this transistor is easy to install on printed circuit boards. With a transition frequency of 150MHz and a minimum DC current gain (hFE) of 40, it delivers efficient switching and amplification. The component operates effectively across a wide temperature range, from -55°C up to 200°C, ensuring stability in extreme environments.

Key Specifications

• Transistor Polarity: PNP
• Collector Emitter Voltage (Max): 100V
• Collector-Base Voltage: 120V
• Continuous Collector Current: 1A
• Power Dissipation: 1W
• Transition Frequency: 150MHz
• DC Current Gain (hFE Min): 40hFE
• Operating Temperature Range: -55°C to 200°C

Compact in size, the component measures 43mm in height, 33mm in width, and 15mm in depth, with a lightweight profile of just 0.2 grams, making it ideal for space-constrained assemblies. Whether used for power management or heavy-duty industrial systems, this robust transistor provides the durability and electrical characteristics required for professional electronic design.