PNP Silicon Medium Power Bipolar Transistor, SOT-23

The DIODES INC. PNP Silicon Medium Power Bipolar Transistor is engineered for reliable performance in demanding electronic circuits. This PNP planar transistor features a low equivalent on resistance RCE(sat) of 350mΩ at 1A, ensuring efficient power management and minimal energy loss during operation.

Designed for surface mount applications, this transistor comes in a compact SOT-23 case style with 3 pins, making it highly suitable for space-constrained PCB layouts. It boasts a maximum collector emitter voltage of 40V and a continuous collector current of 1A, providing robust capabilities for medium power tasks. With a power dissipation of 500mW and a transition frequency of 150MHz, it delivers consistent and high-speed switching performance.

The component operates effectively across a wide temperature range from -55°C to 150°C, making it highly suitable for industrial environments. It also features a DC current gain (hFE) of 300, ensuring excellent signal amplification. A complementary NPN type is available, allowing for flexible push-pull circuit design configurations.

Key Specifications

• Transistor Polarity: PNP
• Collector Emitter Voltage Max: 40V
• Continuous Collector Current: 1A
• Power Dissipation: 500mW
• Transition Frequency: 150MHz
• DC Current Gain hFE: 300
• Mounting: Surface Mount
• Case Style: SOT-23
• Operating Temperature Range: -55°C to 150°C

Whether you are designing power management systems or industrial equipment, this transistor offers a dependable and efficient solution for your electronic applications.