GENESIC Silicon Carbide Schottky Diode MPS Single 1.2kV 1A DO-214

The GENESIC Silicon Carbide Schottky Diode is a high-performance surface-mount component engineered for efficiency and reliability in demanding power applications. As part of the MPS product range, this single-diode configuration is designed to handle a repetitive peak reverse voltage of 1.2kV with an average forward current of 1A, making it suitable for high-voltage circuits. Its advanced Silicon Carbide (SiC) technology offers superior switching performance compared to traditional silicon diodes, resulting in lower switching losses and higher temperature operation.

A key specification is its low total capacitive charge of just 4nC, which contributes to faster switching speeds and reduced power dissipation. The component is housed in a compact DO-214 (SMB) surface-mount package with 2 pins, facilitating easy integration into modern PCB designs. It is rated for a maximum operating temperature of 175°C, ensuring stable performance in high-heat environments typical of power supplies, inverters, and motor drives.

Applications

This Schottky diode is ideal for use in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), solar inverters, and electric vehicle charging systems where high efficiency and thermal stability are critical. Its robust construction and high-voltage capability also make it a reliable choice for industrial motor controls and renewable energy applications.

Specifications

• Diode Type: Silicon Carbide (SiC) Schottky
• Product Range: MPS
• Configuration: Single
• Repetitive Peak Reverse Voltage: 1.2 kV
• Average Forward Current: 1 A
• Total Capacitive Charge: 4 nC
• Package / Case: DO-214 (SMB)
• Mounting Type: Surface Mount
• Number of Pins: 2
• Maximum Operating Temperature: +175°C

With its combination of high-voltage tolerance, efficient switching, and compact form, the