Infineon 64Kbit F-RAM Non-Volatile Memory, 8K x 8, 16MHz, 3-3.6V, 8-Pin SOIC

The Infineon CY15B064Q-SXE is a 64Kbit automotive-grade F-RAM (Ferroelectric Random Access Memory) non‑volatile memory, built using an advanced ferroelectric process. Unlike traditional serial flash or EEPROM, this F‑RAM performs read and write operations at full bus speed—there are no write delays. Data is written to the memory array immediately after each byte is transferred, allowing the next bus cycle to begin without any data‑polling overhead. This eliminates the complexity, latency, and system‑level reliability issues associated with other non‑volatile memories.

A key advantage is its exceptional endurance: the device supports up to 10¹³ read/write cycles, which is 10 million times greater than typical EEPROM. It also offers outstanding data retention, reliably preserving data for 121 years. Designed as a direct hardware replacement for serial flash and EEPROM, it simplifies system design while improving performance and reliability.

Features & Benefits

• High‑Speed SPI Interface: Very fast serial peripheral interface (SPI) operating at up to 16MHz, supporting SPI mode 0 (0,0) and mode 3 (1,1).
• Sophisticated Write Protection: Combines hardware protection via an active‑low Write Protect (/WP) pin with software‑configurable block protection for ¼, ½, or the entire memory array.
• Low Power Consumption: Consumes only 300µA active current at 1MHz and a typical 6µA standby current at +85°C.
• Wide Operating Range: Low operating voltage from 3V to 3.6V and an extended automotive temperature range from –40°C to +125°C.
• Automotive Qualified: Fully compliant with AEC‑Q100 Grade 1 standards, ensuring reliability for demanding automotive applications.
• Compact Package: Supplied in an 8‑pin SOIC surface‑mount package, ideal for space‑constrained designs.

This memory is logically organised as 8K × 8, making it suitable for a wide range of applications that require fast,