INFINEON Bipolar RF Transistor NPN 12V 6GHz SOT-23

The INFINEON Bipolar RF Transistor is a high-frequency NPN transistor engineered for RF applications. With a transition frequency of 6GHz, it delivers reliable performance in signal amplification and processing circuits. This surface-mount device is housed in a compact SOT-23 case, making it suitable for space-constrained designs.

The transistor supports a collector-emitter voltage of up to 12V and a continuous collector current of 90mA, with a power dissipation of 300mW. It offers a DC current gain (hFE) of 70, ensuring consistent amplification characteristics. The device operates at temperatures up to 150°C, providing robustness in demanding environments.

Key Features

• NPN polarity for standard RF circuit integration
• High transition frequency of 6GHz
• Surface-mount SOT-23 package with 3 pins
• Maximum power dissipation of 300mW
• Continuous collector current rating of 90mA

Ideal for engineers and hobbyists working on RF modules, this transistor provides a dependable solution for high-frequency signal handling. Its small footprint and surface-mount design facilitate efficient PCB assembly, contributing to streamlined manufacturing processes.