Infineon HEXFET N-Channel Power MOSFET, 30V 78A TO-220AB

The Infineon HEXFET® Power MOSFET in a TO-220AB package is an advanced semiconductor device engineered for high-performance, high-efficiency power switching. Optimised specifically for demanding applications such as UPS (Uninterruptible Power Supplies) and inverters, it delivers exceptional reliability and minimal power loss under heavy loads. Its defining characteristic is an extremely low drain-source on-state resistance (RDS(on)) of just 3500µΩ at a 10V gate-source test voltage, which translates to superior conductivity and reduced heat generation during operation.

This N-channel MOSFET features an ultra-low gate impedance, enabling fast switching speeds and precise control, which is critical for modern power conversion circuits. It is also fully characterised for avalanche voltage and current, providing designers with guaranteed robustness and safety margins for rugged operating conditions. The device can handle a continuous drain current of 78A and a drain-source voltage of 30V, with a maximum power dissipation of 140W.

Housed in the industry-standard TO-220AB through-hole package, it offers excellent thermal performance and is easy to mount on a heatsink for effective heat management. With a high maximum operating temperature of 175°C and a compact, three-pin design, it is a versatile and durable solution for a wide range of power electronics projects where efficiency, current handling, and thermal stability are paramount.