INFINEON IGBT Single Transistor, 60A, 1.6 kV, TO-247 Package

The INFINEON IGBT Single Transistor is a robust reverse-conducting Insulated Gate Bipolar Transistor (IGBT) engineered for demanding high-power switching applications. This component is distinguished by its monolithic body diode, which is integrated directly into the silicon for superior performance and reliability.

It offers a high collector-emitter voltage of 1.6 kV and a continuous collector current of 60A, making it capable of handling significant power levels. The transistor is designed for efficiency, with a low collector-emitter saturation voltage of 1.85V, helping to minimise conduction losses and improve overall system energy efficiency. Its high power dissipation rating of 263W ensures stable operation under load.

Key Features & Benefits

• Integrated Body Diode: Features a powerful monolithic body diode with a low forward voltage, eliminating the need for an external diode in many circuits and simplifying design.
• High Ruggedness: Built for durability with temperature-stable behaviour, ensuring consistent performance across a wide operating range up to a maximum of 175°C.
• Easy Parallel Configuration: The positive temperature coefficient in VCE (collector-emitter voltage) facilitates easy and safe parallel switching capability for scaling up current handling.
• Consistent Performance: Boasts very tight parameter distribution from unit to unit, which is critical for predictable circuit behaviour in mass production.
• Low Electromagnetic Interference (EMI): Designed to help reduce electromagnetic noise, aiding in compliance with regulatory standards and improving system reliability.

Housed in a industry-standard 3-pin TO-247 through-hole package, this transistor is mechanically robust and suitable for manual or automated assembly processes. Its primary applications include high-efficiency power supplies, induction cooking systems, and microwave ovens,where