Infineon IRF1404ZPBF Power MOSFET, N Channel, 40V, 190A, TO-220AB

The Infineon IRF1404ZPBF is a robust 40V, single N-channel HEXFET® Power MOSFET, engineered using the latest processing techniques to deliver an exceptionally low on-resistance per unit of silicon area. This advanced design ensures high efficiency and minimal power loss in operation.

Key to its performance is the ability to operate at junction temperatures up to 175°C, combined with fast switching speeds and an improved repetitive avalanche rating. These features collectively make the IRF1404ZPBF an extremely reliable and efficient component, suitable for demanding power management tasks across a wide range of applications.

Key Features

• Advanced HEXFET® Technology: Leverages cutting-edge process technology for optimal performance.
• Ultra-Low On-Resistance (Rds(on)): Rated at just 3700 µΩ at 10V, minimising conduction losses and improving overall system efficiency.
• High-Temperature Operation: Designed for a maximum operating junction temperature of 175°C, ensuring reliability under stressful thermal conditions.
• Robust Avalanche Capability: Rated for repetitive avalanche events up to the maximum junction temperature, enhancing durability in inductive load applications.
• High Current Handling: Capable of a continuous drain current (Id) of 190A, making it suitable for high-power circuits.

Housed in a standard TO-220AB through-hole package, this MOSFET is easy to mount and integrate into a variety of circuit designs, from motor drives and power supplies to DC-DC converters and inverters. Its combination of high current capacity, low resistance, and thermal robustness makes it a cornerstone component for engineers seeking reliable power switching solutions.