INFINEON IRF3205PBF N-Channel Power MOSFET, 55V, 110A, TO-220AB

The INFINEON IRF3205PBF is a high-performance HEXFET® N-channel Power MOSFET engineered for demanding applications. It delivers extremely low on-resistance per silicon area, a key benefit that minimises power loss and heat generation, leading to superior energy efficiency. Combined with its fast switching capabilities, this device offers designers a highly reliable and effective solution for a wide array of power management circuits.

This advanced MOSFET utilises sophisticated processing techniques to achieve its robust electrical characteristics. The ruggedised device design is fully avalanche rated, providing enhanced durability and protection against voltage transients. Its dynamic dv/dt rating and ability to handle gate-source voltages of up to ±20V further contribute to its versatility and reliability in challenging operational environments.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 55 V
• Continuous Drain Current (Id): 110 A
• Drain-Source On-State Resistance (Rds(on)): 8000 µΩ (tested at 10V)
• Gate-Source Threshold Voltage: 4 V (max)
• Power Dissipation: 200 W
• Maximum Operating Temperature: 175°C

Housed in a standard TO-220AB package for through-hole mounting, this component is easy to integrate onto printed circuit boards (PCBs). Its three-pin configuration ensures straightforward installation, making it a preferred choice for both prototyping and volume production where performance and thermal management are critical.