Infineon IRF5210STRLPBF P-Channel MOSFET 100V 38A TO-263

The Infineon IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET designed for high efficiency and reliability in demanding power management applications. Its advanced process technology delivers ultra-low ON-resistance, enabling reduced conduction losses and enhanced energy efficiency.

This device supports fast switching speeds and provides a repetitive avalanche rating up to the maximum junction temperature (Tjmax), ensuring robustness in stressful operating conditions. Featuring a maximum operating junction temperature of 150°C, the IRF5210STRLPBF is built to perform reliably in high-temperature environments.

Key Features

• Advanced process technology for superior performance
• Ultra-low ON-resistance (0.06Ω) for minimal power loss
• Fast switching capability for efficient operation
• Repetitive avalanche allowed up to Tjmax
• P-Channel polarity with 100V drain-source voltage

Typical Applications

• Power management systems
• Automotive electronics
• General-purpose switching circuits

The device is housed in a TO-263 (D2PAK) surface-mount package with 3 pins, suitable for automated assembly. It supports a continuous drain current of 38A and offers a power dissipation of 3.8W. The gate-source threshold voltage is a maximum of 4V, and the Rds(on) test voltage is 10V. This product is lead-free and RoHS compliant, ensuring environmental responsibility.