INFINEON IRF640NPBF N-Channel Power MOSFET, 200V, 18A, TO-220AB

The INFINEON IRF640NPBF is a robust 200V, single N-channel HEXFET power MOSFET presented in a through-hole TO-220AB package. It is engineered for high efficiency and reliability in demanding electronic circuits, making it an excellent choice for power management and switching applications.

This component is characterised by its extremely low on-resistance per silicon area, which minimises power loss and heat generation during operation. It is designed for rugged performance, featuring a dynamic dv/dt rating, fast switching capabilities, and is fully avalanche rated to handle voltage spikes safely.

Key Specifications & Features

• High Voltage & Current Handling: With a drain-to-source voltage (Vds) of 200V and a continuous drain current (Id) of 18A, this MOSFET can manage significant power levels.
• Low On-Resistance: An on-resistance (Rds(on)) of just 0.15 ohm at 10V gate drive ensures efficient operation with minimal conduction losses.
• High Power Dissipation: Capable of dissipating up to 150W of power at 25°C, allowing it to operate reliably under high-load conditions.
• Wide Temperature Range: The operating junction temperature spans from -55°C to 175°C, providing stability and performance across extreme environmental conditions.
• Robust Gate Drive: The gate-to-source voltage (Vgs) is rated at ±20V, with a maximum gate-source threshold voltage of 4V, offering good noise immunity and control.

The through-hole TO-220AB package ensures easy mounting onto printed circuit boards (PCBs) and provides a thermal tab for effective heat sinking, which is crucial for maintaining performance at high power levels.