Infineon IRF9520NPBF P-Channel Power MOSFET, 100V, 6.8A, TO-220AB

The Infineon IRF9520NPBF is a high-performance P-channel HEXFET® Power MOSFET, designed for efficient and reliable power management in a wide variety of commercial and industrial applications. This fifth-generation device leverages advanced processing techniques to deliver an exceptionally low on-resistance per silicon area, maximising efficiency and minimising power loss.

Renowned for its fast switching speed and ruggedised design, this MOSFET provides designers with a robust component capable of handling demanding electrical environments. It is fully avalanche rated and can operate at temperatures up to 175°C, ensuring stable performance under strenuous conditions. The universally preferred TO-220AB through-hole package facilitates easy mounting and is ideal for applications with power dissipation levels up to approximately 50 watts.

Key Features & Benefits

• Advanced HEXFET Technology: Fifth-generation design ensures extremely low on-resistance for higher efficiency.
• High Reliability: Ruggedised device construction and full avalanche rating enhance durability and circuit protection.
• Fast Switching: Enables efficient operation in high-frequency power conversion and management circuits.
• Wide Operating Temperature: Can function reliably in environments up to 175°C.
• Robust Package: The TO-220AB through-hole case is mechanically strong and offers excellent thermal performance for heat dissipation.

With its combination of advanced electrical characteristics and a dependable physical package, the IRF9520NPBF is an excellent choice for engineers seeking a proven, high-quality power MOSFET for their designs.