Infineon IRFP3710PBF N-Channel Power MOSFET, 100V 57A, TO-247AC

The Infineon IRFP3710PBF is a high-performance, single N-channel HEXFET® Power MOSFET designed for robust power management applications. It utilises advanced planar technology to deliver an extremely low on-resistance per silicon area, ensuring minimal conduction losses and high efficiency in operation. This MOSFET also features fast switching performance, making it suitable for a wide range of demanding electronic circuits.

Rated for operation up to 175°C, this component is built for reliability in high-temperature environments. It is fully avalanche rated and boasts a dynamic dV/dt rating, enhancing its durability and ability to handle voltage transients commonly encountered in power switching scenarios. With a continuous drain current (Id) of 57A and a drain-source voltage (Vds) of 100V, it is capable of managing significant power levels.

Key Features & Specifications

• Advanced Technology: Utilises HEXFET® planar technology for low Rds(on) and fast switching.
• High Power Handling: Continuous drain current of 57A and power dissipation of 200W.
• Low On-Resistance: Drain-source on-state resistance (Rds(on)) is just 0.025 ohms at a 10V test voltage, minimising power loss.
• Robust Construction: Features a TO-247AC through-hole package for secure mounting and excellent thermal performance.
• High-Temperature Operation: Maximum operating temperature of 175°C.
• Electrical Ratings: Gate-source threshold voltage maximum of 4V.

With its combination of high current capacity, low resistance, and robust thermal characteristics, the IRFP3710PBF is an excellent choice for designers seeking efficient and reliable power switching solutions.