Infineon IRFP4668PBF Power MOSFET, N-Channel, 200V, 130A, TO-247AC

The Infineon IRFP4668PBF is a robust 200V, N-channel HEXFET power MOSFET presented in a standard TO-247AC through-hole package. Engineered for high-performance power management, this component is distinguished by its excellent ruggedness, featuring improved gate, avalanche, and dynamic dV/dt capability, which ensures reliable operation under demanding switching conditions.

With a remarkably low on-resistance (Rds(on)) of just 8 milliohms at a gate-source voltage of 10V, it enables highly efficient power conversion with minimal conduction losses. The MOSFET is rated for a continuous drain current of 130A and a power dissipation of 520W at 25°C, making it suitable for high-power applications.

Key Features & Applications

This MOSFET is specifically designed for high-efficiency synchronous rectification in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its fast-switching characteristics also make it an ideal choice for high-speed power switching, hard-switched circuits, and high-frequency designs. The enhanced body diode provides superior dV/dt and dI/dt capability, contributing to overall system robustness.

Technical Specifications

• Voltage Ratings: Drain-source voltage (Vds) of 200V with a gate-source voltage (Vgs) tolerance of ±30V.
• Current & Resistance: Continuous drain current (Id) of 130A with an ultra-low drain-source on-state resistance of 9700 microohms.
• Thermal Performance: Capable of dissipating up to 520W and operates within a wide junction temperature range from -55°C to +175°C.
• Package: Standard TO-247AC through-hole mounting with 3 pins for secure PCB attachment.
• Dimensions: Compact package measuring 33mm in width, 43mm in height, and 15mm in depth.

Fully characterised for capacitance and avalanche safe operating area (SOA), the IRFP4668PBF from Infineon's HEXFET series is a reliable and high