Infineon IRFZ34NPBF Power MOSFET N Channel 55V 29A TO-220AB

The Infineon IRFZ34NPBF is a high-performance N Channel Power MOSFET designed for efficient power management in a wide range of applications. This 55V device delivers a continuous drain current of 29A and features an extremely low on-resistance of just 0.04 ohm, ensuring minimal power loss and enhanced efficiency in your circuits.

Built with advanced planar technology, the IRFZ34NPBF offers fast switching performance and a high 175°C operating temperature, making it suitable for demanding environments. Its dynamic dV/dt rating and fully avalanche-rated design provide robust reliability under stressful conditions. The TO-220AB package is through-hole mounted, simplifying integration into your PCB designs.

With a maximum power dissipation of 68W and a gate-source threshold voltage of 4V, this MOSFET delivers consistent performance for power supply, motor control, and other power conversion tasks. The three-pin configuration ensures easy connectivity, while the lead-free and RoHS-compliant construction meets modern environmental standards.

Key Features

• Extremely low on-resistance (0.04 ohm)
• High continuous drain current (29A)
• Fast switching with advanced planar technology
• Fully avalanche rated
• Dynamic dV/dt rating for robust operation
• High operating temperature up to 175°C

Product Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 55V
• Continuous Drain Current (Id): 29A
• Drain Source On-State Resistance (Rds(on)): 0.04 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 68W
• Number of Pins: 3
• Operating Temperature Max: 175°C
• Transistor Mounting: Through Hole
• Package: TO-220AB