INFINEON IRFZ44NPBF N-Channel Power MOSFET, 55V 41A, TO-220AB
INFINEON N-Channel Power MOSFET, 55V 41A, 0.0175ohm Rds(on). HEXFET technology, TO-220AB package for power management.
The INFINEON IRFZ44NPBF is a robust N-channel HEXFET® Power MOSFET designed for high-efficiency power management. It features an extremely low on-state resistance (Rds(on)) of 0.0175 ohm, which minimises power loss and heat generation, enhancing overall system efficiency. This benefit is combined with the fast switching performance and ruggedised design for which HEXFET power MOSFETs are renowned, providing designers with a reliable and efficient component for demanding applications.
Built using advanced process technology, this MOSFET is fully avalanche rated and boasts a high dynamic dv/dt rating, ensuring stable operation under stressful electrical conditions. It is capable of handling a continuous drain current of 41A and a drain-source voltage of 55V, making it suitable for high-current switching tasks. The through-hole TO-220AB package offers excellent thermal performance and ease of mounting on printed circuit boards (PCBs).
Key Features and Specifications
- Channel Type: N-Channel
- Drain-Source Voltage (Vds): 55 V
- Continuous Drain Current (Id): 41 A
- Drain-Source On-State Resistance (Rds(on)): 0.0175 ohm (tested at 10V)
- Gate-Source Threshold Voltage (Max): 4 V
- Maximum Power Dissipation: 94 W
- Package Type: TO-220AB, Through-Hole
- Pin Count: 3 Pins
- Maximum Operating Temperature: 175°C
- Technology: Advanced HEXFET® process
- Ratings: Fully avalanche rated, High dynamic dv/dt rating
With its combination of low resistance, high current capability, and robust construction, the IRFZ44NPBF is an excellent choice for improving the performance and reliability of power electronics designs.
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