Infineon IRLL2705 N-Channel Power MOSFET 55V 3.8A SOT-223

The Infineon IRLL2705 N-Channel Power MOSFET delivers high efficiency and reliability for a range of power management tasks. It features a HEXFET® fifth-generation design that uses advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized construction for robust operation. The SOT-223 package is ideal for surface-mount assembly and is compatible with vapour phase, infrared, and wave soldering processes.

The unique package design provides improved thermal performance thanks to an enlarged tab for heat sinking, and its standard outline allows for easy automatic pick-and-place. It is capable of dissipating up to 1W in typical surface-mount applications, with a low static drain-to-source on-resistance of just 0.04 ohms, and is designed for ease of paralleling, making it a flexible choice for many designs.

Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 55V
  • Continuous Drain Current (Id): 3.8A
• Drain Source On-State Resistance: 0.04 ohm
• Transistor Case Style: SOT-223
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 2V
• Power Dissipation: 1W
• No. of Pins: 3
• Operating Temperature Max: 150°C
• MSL: MSL 1 - Unlimited

This component is a reliable choice for designers needing a balance of performance and versatility in power switching applications.