Infineon IRLML2803PBF SOT-23 N-Channel Power MOSFET, 30V 850mA

The Infineon IRLML2803PBF is a high-performance N-channel HEXFET® Power MOSFET, engineered for efficiency and reliability in modern electronic designs. This fifth-generation device leverages advanced processing techniques to deliver an exceptionally low on-resistance per silicon area, a key factor in minimising power loss and heat generation.

Renowned for their fast switching speeds and rugged construction, HEXFET® MOSFETs provide designers with a robust and highly efficient component. The IRLML2803PBF combines these benefits in a compact, low-profile SOT-23 package, making it ideal for space-constrained applications where both performance and size are critical.

Its design supports a wide gate-source voltage range and is manufactured to be halogen-free, aligning with modern environmental and safety standards. This MOSFET is a versatile and dependable choice for power management tasks, offering stable operation across a broad spectrum of uses.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 850mA
• Drain-Source On-State Resistance (Rds(on)): 0.25 Ohm (typical at 10V test voltage)
• Gate-Source Threshold Voltage: 1V max
• Maximum Power Dissipation: 400mW
• Package / Case Style: SOT-23 (Surface Mount)
• Low Profile: Height < 1.1mm
• Pin Count: 3 Pins
• Maximum Operating Temperature: 150°C