Infineon IRLU024NPBF Power MOSFET N-Channel 55V 17A TO-251AA

The Infineon IRLU024NPBF is a single N-channel HEXFET® Power MOSFET designed for high-efficiency power management applications. With a drain-source voltage of 55V and a continuous drain current of 17A, this transistor delivers robust performance in a compact TO-251AA package. The device features an extremely low on-resistance of just 0.065Ω per silicon area, ensuring minimal conduction losses and improved system efficiency.

Utilising advanced planar technology, this MOSFET offers fast switching performance and is fully avalanche rated, making it suitable for demanding environments. The logic-level gate drive simplifies interfacing with low-voltage control circuits, while the dynamic dV/dt rating ensures reliable operation under transient conditions. With an operating temperature range up to 175°C, this component is built to withstand high thermal stress, making it ideal for industrial and automotive applications.

Key Features

• N-Channel enhancement mode
• Drain-Source Voltage (Vds): 55V
• Continuous Drain Current (Id): 17A
• On-State Resistance: 0.065Ω
• Gate-Source Threshold Voltage (Max): 2V
• Power Dissipation: 46W
• Logic-level gate drive for easy control
• Fully avalanche rated for ruggedness
• Dynamic dV/dt rating for high-speed switching
• Operating Temperature: Up to 175°C
• Through-hole TO-251AA package
• 3-pin configuration

The IRLU024NPBF is a reliable choice for power supply, motor control, and other power conversion applications where efficiency and durability are paramount.