Infineon N-Channel CoolMOS Power MOSFET, 650V, 20.7A, TO-220

The Infineon SPP20N60C3 is a high-performance, 650V N-channel CoolMOS™ Power MOSFET engineered to deliver exceptional efficiency and power density in demanding applications. This state-of-the-art component is specifically designed to minimise conduction, switching, and driving losses, enabling the development of superior power conversion systems that are more efficient, compact, and lightweight. By utilising the latest generation of high-voltage MOSFET technology, it allows for cooler operation in AC-DC power supplies and other power management solutions.

A defining feature of this MOSFET is its extremely low specific on-state resistance (Rds(on)), which translates to reduced power loss during operation. Coupled with a very low gate charge (Qg) and minimal energy storage in its output capacitance (Eoss), the device ensures outstanding switching performance. These characteristics contribute directly to higher overall system efficiency, greater reliability, and simplified circuit design, making it an easy-to-use yet powerful component for engineers.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 650 V
• Continuous Drain Current (Id): 20.7 A
• Drain-Source On-State Resistance (Rds(on)): 0.19 Ω (tested at 10V)
• Maximum Gate-Source Threshold Voltage: 3 V
• Power Dissipation: 208 W
• Package / Case Style: TO-220 (Through-Hole)
• Number of Pins: 3
• Maximum Operating Temperature: 150 °C

With its robust construction and high reliability, the Infineon CoolMOS™ Power MOSFET is an ideal choice for designers aiming to push the boundaries of power supply performance and density.