Infineon N-Channel Power MOSFET 200V 18A 0.1 ohm TO-220AB

The Infineon N-Channel Power MOSFET utilises advanced processing techniques to achieve exceptionally low ON-resistance per silicon area. This makes it an ideal choice for demanding applications where power efficiency and performance are critical. The gate charge, body-diode reverse recovery, and internal gate resistance are specifically optimised to improve key class-D audio amplifier performance factors, including efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI).

This device features a robust design with a 175°C operating junction temperature and repetitive avalanche capability, ensuring reliable operation under challenging conditions. It can deliver up to 300W per channel into an 8Ω load when used in a half-bridge configuration amplifier.

Key Performance Benefits

• Low RDS (ON) for improved efficiency
• Low Qg and Qsw for better THD and enhanced efficiency
• Low QRR for better THD and lower EMI

With compact dimensions of 43 mm x 33 mm x 15 mm and a lightweight design of just 2.826 grams, this through-hole mounting MOSFET is suitable for a variety of space-conscious circuit designs.