Infineon N-Channel Power MOSFET, 200V, 9.3A, 0.3 Ohm, TO-220AB

The Infineon N-Channel Power MOSFET utilises advanced planar technology to deliver extremely low on-resistance per silicon area and fast switching performance. Designed for high-efficiency power management applications, this HEXFET® device ensures reliable operation even in demanding conditions.

This robust MOSFET is fully avalanche rated and features a dynamic dV/dt rating, providing excellent resilience against voltage spikes. With a maximum operating temperature of 175°C, it is well-suited for high-stress environments. The component is easy to parallel and has simple drive requirements, making it highly versatile for various circuit designs.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 9.3A
• Drain Source On State Resistance: 0.3 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 82W
• Case Style: TO-220AB
• Mounting Type: Through Hole
• Number of Pins: 3

Featuring a compact form factor with dimensions of 43 mm x 33 mm x 15 mm and a lightweight design of just 2 grams, this through-hole MOSFET is straightforward to integrate into your PCB layouts, offering both space efficiency and high-performance power management.