Infineon N Channel Power MOSFET, 25 V, 5.8 A, SOT-23

The Infineon N-Channel Power MOSFET is a high-performance HEXFET® component engineered for lower switching losses and increased reliability. Designed to be fully compatible with existing surface mount techniques, this transistor ensures seamless integration into your electronic designs. It features an industry-standard pinout for straightforward PCB layout and installation.

This power MOSFET is qualified for consumer applications and boasts an MSL1 rating, making it suitable for a wide range of manufacturing environments. Additionally, the device is environment-friendly, aligning with modern sustainability standards. Its primary application lies in power management, where efficiency and dependable performance are crucial.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 25 V
• Continuous Drain Current (Id): 5.8 A
• Drain Source On-State Resistance: 0.024 ohm
• Rds(on) Test Voltage: 10 V
• Gate Source Threshold Voltage Max: 1.7 V
• Power Dissipation: 1.25 W
• Case Style: SOT-23
• Mounting Type: Surface Mount
• Number of Pins: 3
• Maximum Operating Temperature: 150°C
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 0.008 grams

Whether you are designing power management circuits or upgrading existing hardware, this surface-mount MOSFET delivers reliable switching performance in a compact SOT-23 package.