Infineon N Channel Power MOSFET, 30 V, 161 A, 3300 µohm, TO-252AA

The Infineon N Channel Power MOSFET is a high-performance HEXFET® single N-channel transistor designed for advanced power management applications. It features ultra-low gate impedance and fully characterised avalanche voltage and current, ensuring robust and reliable operation under demanding conditions.

A standout feature of this MOSFET is its very low static drain-to-source ON-resistance at a 4.5V gate-to-source voltage, making it ideal for logic-level applications. This low resistance significantly reduces power loss and improves overall efficiency in your circuit designs.

Applications

This component is highly suitable for high-frequency synchronous buck converters and high-frequency isolated DC-to-DC converters equipped with synchronous rectification. It is perfectly suited for use in power management systems, computers, computer peripherals, communications networking, and industrial equipment.

Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 161A
• Drain Source On State Resistance: 3300µohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 2.3V
• Power Dissipation: 140W
• Transistor Case Style: TO-252AA
• Mounting Type: Surface Mount
• Number of Pins: 3
• Operating Temperature Max: 175°C

Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, and weighing just 0.702 grams, its surface mount design provides efficient and reliable performance for space-constrained PCB layouts and high-frequency power conversion needs.